IPI111N15N3GAKSA1
Infineon Technologies
Product No:
IPI111N15N3GAKSA1
Manufacturer:
Package:
PG-TO262-3
Datasheet:
-
Description:
MOSFET N-CH 150V 83A TO262-3
Quantity:
Delivery:
Payment:
In Stock : 272
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.26025
$3.26025
10
$2.934225
$29.34225
50
$2.6082
$130.41
100
$2.282175
$228.2175
500
$2.21697
$1108.485
1000
$2.1735
$2173.5
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 3230 pF @ 75 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 11.1mOhm @ 83A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 160µA |
| Supplier Device Package | PG-TO262-3 |
| Drain to Source Voltage (Vdss) | 150 V |
| Power Dissipation (Max) | 214W (Tc) |
| Series | OptiMOS™ |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Package | Tube |
| Base Product Number | IPI111 |
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