
Infineon Technologies
Product No:
IPI60R125CPXKSA1
Manufacturer:
Package:
PG-TO262-3
Datasheet:
-
Description:
MOSFET N-CH 650V 25A TO262-3
Quantity:
Delivery:

Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.896235
$3.896235
10
$3.506612
$35.06612
50
$3.116988
$155.8494
100
$2.727365
$272.7365
500
$2.64944
$1324.72
1000
$2.59749
$2597.49
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| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 16A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 1.1mA |
| Supplier Device Package | PG-TO262-3 |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 208W (Tc) |
| Series | CoolMOS™ |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | IPI60R125 |