IPI60R125CPXKSA1
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IPI60R125CPXKSA1

Infineon Technologies

Product No:

IPI60R125CPXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

Datasheet:

-

Description:

MOSFET N-CH 650V 25A TO262-3

Quantity:

Delivery:

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Payment:

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In Stock : 370

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.896235

    $3.896235

  • 10

    $3.506612

    $35.06612

  • 50

    $3.116988

    $155.8494

  • 100

    $2.727365

    $272.7365

  • 500

    $2.64944

    $1324.72

  • 1000

    $2.59749

    $2597.49

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 125mOhm @ 16A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 1.1mA
Supplier Device Package PG-TO262-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 208W (Tc)
Series CoolMOS™
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPI60R125