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IPI80P03P4-05AKSA1
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IPI80P03P4-05AKSA1

Infineon Technologies

Product No:

IPI80P03P4-05AKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3-1

Datasheet:

-

Description:

P-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 2090

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.24425

    $1.24425

  • 10

    $1.119825

    $11.19825

  • 50

    $0.9954

    $49.77

  • 100

    $0.870975

    $87.0975

  • 500

    $0.84609

    $423.045

  • 1000

    $0.8295

    $829.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 10300 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 5mOhm @ 80A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 253µA
Supplier Device Package PG-TO262-3-1
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 137W (Tc)
Series Automotive, AEC-Q101, OptiMOS™
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk