IPI90R1K0C3
Infineon Technologies
Product No:
IPI90R1K0C3
Manufacturer:
Package:
PG-TO262-3
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
Delivery:
Payment:
In Stock : 1167
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.5435
$1.5435
10
$1.38915
$13.8915
50
$1.2348
$61.74
100
$1.08045
$108.045
500
$1.04958
$524.79
1000
$1.029
$1029
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 100 V |
| FET Type | N-Channel |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.3A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 3.5V @ 370µA |
| Supplier Device Package | PG-TO262-3 |
| Drain to Source Voltage (Vdss) | 900 V |
| Power Dissipation (Max) | 89W (Tc) |
| Series | CoolMOS™ |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |
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