IPN60R600P7SATMA1

Infineon Technologies

Product No:

IPN60R600P7SATMA1

Manufacturer:

Package:

PG-SOT223

Datasheet:

Description:

MOSFET N-CHANNEL 600V 6A SOT223

Quantity:

Delivery:

Payment:

In Stock : 2207

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	363 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	600mOhm @ 1.7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 80µA
Supplier Device Package	PG-SOT223
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	7W (Tc)
Series	CoolMOS™ P7
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPN60R600