IPN80R3K3P7ATMA1
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IPN80R3K3P7ATMA1

Infineon Technologies

Product No:

IPN80R3K3P7ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-SOT223

Datasheet:

-

Description:

MOSFET N-CH 800V 1.9A SOT223

Quantity:

Delivery:

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Payment:

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In Stock : 704

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.381696

    $0.381696

  • 10

    $0.333984

    $3.33984

  • 50

    $0.286272

    $14.3136

  • 100

    $0.262416

    $26.2416

  • 500

    $0.250488

    $125.244

  • 1000

    $0.23856

    $238.56

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 500 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.3Ohm @ 590mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 30µA
Supplier Device Package PG-SOT223
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 6.1W (Tc)
Series CoolMOS™ P7
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPN80R3