Infineon Technologies
Product No:
IPN80R3K3P7ATMA1
Manufacturer:
Package:
PG-SOT223
Datasheet:
-
Description:
MOSFET N-CH 800V 1.9A SOT223
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.381696
$0.381696
10
$0.333984
$3.33984
50
$0.286272
$14.3136
100
$0.262416
$26.2416
500
$0.250488
$125.244
1000
$0.23856
$238.56
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 500 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 3.3Ohm @ 590mA, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 30µA |
Supplier Device Package | PG-SOT223 |
Drain to Source Voltage (Vdss) | 800 V |
Power Dissipation (Max) | 6.1W (Tc) |
Series | CoolMOS™ P7 |
Package / Case | TO-261-4, TO-261AA |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPN80R3 |