IPN80R900P7ATMA1
detaildesc

IPN80R900P7ATMA1

Infineon Technologies

Product No:

IPN80R900P7ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-SOT223

Datasheet:

-

Description:

MOSFET N-CHANNEL 800V 6A SOT223

Quantity:

Delivery:

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Payment:

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In Stock : 1339

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.700967

    $0.700967

  • 10

    $0.63087

    $6.3087

  • 50

    $0.560773

    $28.03865

  • 100

    $0.490677

    $49.0677

  • 500

    $0.476657

    $238.3285

  • 1000

    $0.467311

    $467.311

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 500 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 900mOhm @ 2.2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 110µA
Supplier Device Package PG-SOT223
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 7W (Tc)
Series CoolMOS™ P7
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPN80R900