IPN95R3K7P7ATMA1
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IPN95R3K7P7ATMA1

Infineon Technologies

Product No:

IPN95R3K7P7ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-SOT223

Datasheet:

-

Description:

MOSFET N-CH 950V 2A SOT223

Quantity:

Delivery:

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Payment:

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In Stock : 9728

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.47628

    $0.47628

  • 10

    $0.416745

    $4.16745

  • 50

    $0.35721

    $17.8605

  • 100

    $0.327443

    $32.7443

  • 500

    $0.312559

    $156.2795

  • 1000

    $0.297675

    $297.675

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 196 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.7Ohm @ 800mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 40µA
Supplier Device Package PG-SOT223
Drain to Source Voltage (Vdss) 950 V
Power Dissipation (Max) 6W (Tc)
Series CoolMOS™ P7
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPN95R3