IPP011N04NF2SAKMA1

Infineon Technologies

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IPP011N04NF2SAKMA1

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Package:

PG-TO220-3-U05

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Description:

TRENCH PG-TO220-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	15000 pF @ 20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	315 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.15mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.4V @ 249µA
Supplier Device Package	PG-TO220-3-U05
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	3.8W (Ta), 375W (Tc)
Series	StrongIRFET™2
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	44A (Ta), 201A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube