IPP024N06N3G
Infineon Technologies
Product No:
IPP024N06N3G
Manufacturer:
Package:
PG-TO220-3-1
Datasheet:
-
Description:
POWER FIELD-EFFECT TRANSISTOR, 1
Quantity:
Delivery:
Payment:
In Stock : 722
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.3625
$2.3625
10
$2.12625
$21.2625
50
$1.89
$94.5
100
$1.65375
$165.375
500
$1.6065
$803.25
1000
$1.575
$1575
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 23000 pF @ 30 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 275 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 100A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 196µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 250W (Tc) |
| Series | OptiMOS™ 3 |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |
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