IPP086N10N3G
Infineon Technologies
Product No:
IPP086N10N3G
Manufacturer:
Package:
PG-TO220-3-1
Datasheet:
-
Description:
POWER FIELD-EFFECT TRANSISTOR, 8
Quantity:
Delivery:
Payment:
In Stock : 73885
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.660898
$0.660898
10
$0.578286
$5.78286
50
$0.495673
$24.78365
100
$0.454367
$45.4367
500
$0.433714
$216.857
1000
$0.413061
$413.061
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 50 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 73A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 75µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 125W (Tc) |
| Series | OptiMOS™ 3 |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Package | Bulk |
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