IPP60R750E6
detaildesc

IPP60R750E6

Infineon Technologies

Product No:

IPP60R750E6

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-1

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 658

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.86625

    $0.86625

  • 10

    $0.779625

    $7.79625

  • 50

    $0.693

    $34.65

  • 100

    $0.606375

    $60.6375

  • 500

    $0.58905

    $294.525

  • 1000

    $0.5775

    $577.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 373 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 17.2 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 750mOhm @ 2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 170µA
Supplier Device Package PG-TO220-3-1
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 48W (Tc)
Series CoolMOS E6™
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk