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IPP65R050CFD7AAKSA1
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IPP65R050CFD7AAKSA1

Infineon Technologies

Product No:

IPP65R050CFD7AAKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

Datasheet:

-

Description:

MOSFET N-CH 650V 45A TO220-3

Quantity:

Delivery:

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Payment:

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In Stock : 266

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $6.54885

    $6.54885

  • 10

    $5.893965

    $58.93965

  • 50

    $5.23908

    $261.954

  • 100

    $4.584195

    $458.4195

  • 500

    $4.453218

    $2226.609

  • 1000

    $4.3659

    $4365.9

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4975 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 50mOhm @ 24.8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 1.24mA
Supplier Device Package PG-TO220-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 227W (Tc)
Series Automotive, AEC-Q101, CoolMOS™ CFD7A
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPP65R050