Infineon Technologies
Product No:
IPP65R099CFD7AAKSA1
Manufacturer:
Package:
PG-TO220-3
Datasheet:
-
Description:
MOSFET N-CH 650V 24A TO220-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.71196
$3.71196
10
$3.340764
$33.40764
50
$2.969568
$148.4784
100
$2.598372
$259.8372
500
$2.524133
$1262.0665
1000
$2.47464
$2474.64
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Operating Temperature | -40°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 2513 pF @ 400 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 99mOhm @ 12.5A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.5V @ 630µA |
Supplier Device Package | PG-TO220-3 |
Drain to Source Voltage (Vdss) | 650 V |
Power Dissipation (Max) | 127W (Tc) |
Series | Automotive, AEC-Q101, CoolMOS™ CFD7A |
Package / Case | TO-220-3 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tube |
Base Product Number | IPP65R099 |