
Infineon Technologies
Product No:
IPP65R110CFD7XKSA1
Manufacturer:
Package:
PG-TO220-3
Datasheet:
-
Description:
HIGH POWER_NEW
Quantity:
Delivery:

Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.00825
$3.00825
10
$2.707425
$27.07425
50
$2.4066
$120.33
100
$2.105775
$210.5775
500
$2.04561
$1022.805
1000
$2.0055
$2005.5
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| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1942 pF @ 400 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 9.7A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.5V @ 480µA |
| Supplier Device Package | PG-TO220-3 |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 114W (Tc) |
| Series | CoolMOS™ CFD7 |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | IPP65R |