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IPP65R110CFD7XKSA1
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IPP65R110CFD7XKSA1

Infineon Technologies

Product No:

IPP65R110CFD7XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

Datasheet:

-

Description:

HIGH POWER_NEW

Quantity:

Delivery:

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Payment:

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In Stock : 262

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.00825

    $3.00825

  • 10

    $2.707425

    $27.07425

  • 50

    $2.4066

    $120.33

  • 100

    $2.105775

    $210.5775

  • 500

    $2.04561

    $1022.805

  • 1000

    $2.0055

    $2005.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1942 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 110mOhm @ 9.7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 480µA
Supplier Device Package PG-TO220-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 114W (Tc)
Series CoolMOS™ CFD7
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPP65R