IPP65R190C7FKSA1
detaildesc

IPP65R190C7FKSA1

Infineon Technologies

Product No:

IPP65R190C7FKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

Datasheet:

-

Description:

MOSFET N-CH 650V 13A TO220-3

Quantity:

Delivery:

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Payment:

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In Stock : 175

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.77093

    $1.77093

  • 10

    $1.593837

    $15.93837

  • 50

    $1.416744

    $70.8372

  • 100

    $1.239651

    $123.9651

  • 500

    $1.204232

    $602.116

  • 1000

    $1.18062

    $1180.62

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 190mOhm @ 5.7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 290µA
Supplier Device Package PG-TO220-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 72W (Tc)
Series CoolMOS™ C7
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPP65R190