Home / Single FETs, MOSFETs / IPP65R190CFD7XKSA1
IPP65R190CFD7XKSA1
detaildesc

IPP65R190CFD7XKSA1

Infineon Technologies

Product No:

IPP65R190CFD7XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

Datasheet:

-

Description:

HIGH POWER_NEW

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 640

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.70667

    $1.70667

  • 10

    $1.536003

    $15.36003

  • 50

    $1.365336

    $68.2668

  • 100

    $1.194669

    $119.4669

  • 500

    $1.160536

    $580.268

  • 1000

    $1.13778

    $1137.78

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 700µA
Supplier Device Package PG-TO220-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 151W (Tc)
Series CoolMOS™ CFD7
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 17.5A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPP65R