IPP65R600C6

Infineon Technologies

Product No:

IPP65R600C6

Manufacturer:

Package:

PG-TO220-3-1

Datasheet:

Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	600mOhm @ 2.1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 210µA
Supplier Device Package	PG-TO220-3-1
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	63W (Tc)
Series	CoolMOS™
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	7.3A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk