IPP80N06S2-07AKSA4

Infineon Technologies

Product No:

IPP80N06S2-07AKSA4

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Package:

PG-TO220-3-1

Datasheet:

Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3400 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	6.6mOhm @ 68A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 180µA
Supplier Device Package	PG-TO220-3-1
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	250W (Tc)
Series	OptiMOS™
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk