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IPSA70R360P7SAKMA1
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IPSA70R360P7SAKMA1

Infineon Technologies

Product No:

IPSA70R360P7SAKMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO251-3

Datasheet:

-

Description:

MOSFET N-CH 700V 12.5A TO251-3

Quantity:

Delivery:

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In Stock : 230

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.01619

    $1.01619

  • 10

    $0.914571

    $9.14571

  • 50

    $0.812952

    $40.6476

  • 100

    $0.711333

    $71.1333

  • 500

    $0.691009

    $345.5045

  • 1000

    $0.67746

    $677.46

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 517 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 16.4 nC @ 400 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 360mOhm @ 3A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 3.5V @ 150µA
Supplier Device Package PG-TO251-3
Drain to Source Voltage (Vdss) 700 V
Power Dissipation (Max) 59.5W (Tc)
Series CoolMOS™ P7
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 12.5A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±16V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPSA70