IPT026N10N5ATMA1
detaildesc

IPT026N10N5ATMA1

Infineon Technologies

Product No:

IPT026N10N5ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-HSOF-8-1

Datasheet:

-

Description:

MOSFET N-CH 100V 27A/202A 8HSOF

Quantity:

Delivery:

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Payment:

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In Stock : 3779

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.325645

    $2.325645

  • 10

    $2.093081

    $20.93081

  • 50

    $1.860516

    $93.0258

  • 100

    $1.627951

    $162.7951

  • 500

    $1.581439

    $790.7195

  • 1000

    $1.55043

    $1550.43

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.6mOhm @ 150A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 158µA
Supplier Device Package PG-HSOF-8-1
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 214W (Tc)
Series OptiMOS™5
Package / Case 8-PowerSFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 202A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IPT026