Infineon Technologies
Product No:
IPT026N10N5ATMA1
Manufacturer:
Package:
PG-HSOF-8-1
Datasheet:
-
Description:
MOSFET N-CH 100V 27A/202A 8HSOF
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.325645
$2.325645
10
$2.093081
$20.93081
50
$1.860516
$93.0258
100
$1.627951
$162.7951
500
$1.581439
$790.7195
1000
$1.55043
$1550.43
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 50 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 2.6mOhm @ 150A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.8V @ 158µA |
Supplier Device Package | PG-HSOF-8-1 |
Drain to Source Voltage (Vdss) | 100 V |
Power Dissipation (Max) | 214W (Tc) |
Series | OptiMOS™5 |
Package / Case | 8-PowerSFN |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 202A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPT026 |