IPT210N25NFDATMA1
detaildesc

IPT210N25NFDATMA1

Infineon Technologies

Product No:

IPT210N25NFDATMA1

Manufacturer:

Infineon Technologies

Package:

PG-HSOF-8-1

Datasheet:

-

Description:

MV POWER MOS

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 1226

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $6.521445

    $6.521445

  • 10

    $5.8693

    $58.693

  • 50

    $5.217156

    $260.8578

  • 100

    $4.565012

    $456.5012

  • 500

    $4.434583

    $2217.2915

  • 1000

    $4.34763

    $4347.63

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7000 pF @ 125 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 21mOhm @ 69A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 267µA
Supplier Device Package PG-HSOF-8-1
Drain to Source Voltage (Vdss) 250 V
Power Dissipation (Max) 375W (Tc)
Series OptiMOS™ 3
Package / Case 8-PowerSFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 69A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPT210