IPT60R022S7XTMA1
detaildesc

IPT60R022S7XTMA1

Infineon Technologies

Product No:

IPT60R022S7XTMA1

Manufacturer:

Infineon Technologies

Package:

PG-HSOF-8-2

Datasheet:

-

Description:

MOSFET N-CH 600V 23A 8HSOF

Quantity:

Delivery:

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Payment:

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In Stock : 1800

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $8.381205

    $8.381205

  • 10

    $7.543085

    $75.43085

  • 50

    $6.704964

    $335.2482

  • 100

    $5.866844

    $586.6844

  • 500

    $5.699219

    $2849.6095

  • 1000

    $5.58747

    $5587.47

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5639 pF @ 300 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 12 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 22mOhm @ 23A, 12V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 1.44mA
Supplier Device Package PG-HSOF-8-2
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 390W (Tc)
Series CoolMOS™S7
Package / Case 8-PowerSFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 12V
Package Tape & Reel (TR)
Base Product Number IPT60R022