IPT60R102G7XTMA1

Infineon Technologies

Product No:

IPT60R102G7XTMA1

Manufacturer:

Package:

PG-HSOF-8-2

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Description:

MOSFET N-CH 600V 23A 8HSOF

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1320 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	102mOhm @ 7.8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 390µA
Supplier Device Package	PG-HSOF-8-2
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	141W (Tc)
Series	CoolMOS™ G7
Package / Case	8-PowerSFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	23A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPT60R102