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IPTG063N15NM5ATMA1
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IPTG063N15NM5ATMA1

Infineon Technologies

Product No:

IPTG063N15NM5ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-HSOG-8

Datasheet:

-

Description:

TRENCH >=100V

Quantity:

Delivery:

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Payment:

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In Stock : 1412

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.76614

    $3.76614

  • 10

    $3.389526

    $33.89526

  • 50

    $3.012912

    $150.6456

  • 100

    $2.636298

    $263.6298

  • 500

    $2.560975

    $1280.4875

  • 1000

    $2.51076

    $2510.76

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 75 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.3mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.6V @ 163µA
Supplier Device Package PG-HSOG-8
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 3.8W (Ta), 214W (Tc)
Series OptiMOS™ 5
Package / Case 8-PowerSMD, Gull Wing
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 16.2A (Ta), 122A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Package Tape & Reel (TR)