Infineon Technologies
Product No:
IPU50R950CE
Manufacturer:
Package:
PG-TO251-3
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.2856
$0.2856
10
$0.2499
$2.499
50
$0.2142
$10.71
100
$0.19635
$19.635
500
$0.187425
$93.7125
1000
$0.1785
$178.5
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 231 pF @ 100 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 950mOhm @ 1.2A, 13V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 100µA |
Supplier Device Package | PG-TO251-3 |
Drain to Source Voltage (Vdss) | 500 V |
Power Dissipation (Max) | 53W (Tc) |
Series | CoolMOS™ |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 13V |
Package | Bulk |