IPU60R1K4C6BKMA1
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IPU60R1K4C6BKMA1

Infineon Technologies

Product No:

IPU60R1K4C6BKMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO251-3

Datasheet:

-

Description:

MOSFET N-CH 600V 3.2A TO251-3

Quantity:

Delivery:

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Payment:

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In Stock : 21834

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.6048

    $0.6048

  • 10

    $0.5292

    $5.292

  • 50

    $0.4536

    $22.68

  • 100

    $0.4158

    $41.58

  • 500

    $0.3969

    $198.45

  • 1000

    $0.378

    $378

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 155°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.1A, 10V
Product Status Discontinued at Digi-Key
Vgs(th) (Max) @ Id 3.5V @ 90µA
Supplier Device Package PG-TO251-3
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 28.4W (Tc)
Series CoolMOS™
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk
Base Product Number IPU60R