IPU60R1K5CEAKMA2
detaildesc

IPU60R1K5CEAKMA2

Infineon Technologies

Product No:

IPU60R1K5CEAKMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO251-3

Datasheet:

-

Description:

MOSFET N-CH 600V 3.1A TO251-3

Quantity:

Delivery:

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Payment:

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In Stock : 658

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.313488

    $0.313488

  • 10

    $0.274302

    $2.74302

  • 50

    $0.235116

    $11.7558

  • 100

    $0.215523

    $21.5523

  • 500

    $0.205727

    $102.8635

  • 1000

    $0.19593

    $195.93

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 90µA
Supplier Device Package PG-TO251-3
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 49W (Tc)
Series CoolMOS™ CE
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPU60R1