IPU80R2K0P7AKMA1
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IPU80R2K0P7AKMA1

Infineon Technologies

Product No:

IPU80R2K0P7AKMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO251-3

Datasheet:

-

Description:

MOSFET N-CH 800V 3A TO251-3

Quantity:

Delivery:

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Payment:

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In Stock : 691

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.530376

    $0.530376

  • 10

    $0.464079

    $4.64079

  • 50

    $0.397782

    $19.8891

  • 100

    $0.364634

    $36.4634

  • 500

    $0.348059

    $174.0295

  • 1000

    $0.331485

    $331.485

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 500 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2Ohm @ 940mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 50µA
Supplier Device Package PG-TO251-3
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 24W (Tc)
Series CoolMOS™ P7
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPU80R2