IPW50R299CP
Infineon Technologies
Product No:
IPW50R299CP
Manufacturer:
Package:
PG-TO247-3-21
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
Delivery:
Payment:
In Stock : 7054
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.142
$2.142
10
$1.9278
$19.278
50
$1.7136
$85.68
100
$1.4994
$149.94
500
$1.45656
$728.28
1000
$1.428
$1428
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 6.6A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Supplier Device Package | PG-TO247-3-21 |
| Drain to Source Voltage (Vdss) | 500 V |
| Power Dissipation (Max) | 104W (Tc) |
| Series | CoolMOS™ |
| Package / Case | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |
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