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IPW65R110CFD7XKSA1
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IPW65R110CFD7XKSA1

Infineon Technologies

Product No:

IPW65R110CFD7XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3

Datasheet:

-

Description:

HIGH POWER_NEW

Quantity:

Delivery:

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Payment:

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In Stock : 150

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.388298

    $3.388298

  • 10

    $3.049468

    $30.49468

  • 50

    $2.710638

    $135.5319

  • 100

    $2.371808

    $237.1808

  • 500

    $2.304042

    $1152.021

  • 1000

    $2.258865

    $2258.865

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1942 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 110mOhm @ 9.7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 480µA
Supplier Device Package PG-TO247-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 114W (Tc)
Series CoolMOS™ CFD7
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPW65R