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IPW65R115CFD7AXKSA1
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IPW65R115CFD7AXKSA1

Infineon Technologies

Product No:

IPW65R115CFD7AXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3-41

Datasheet:

-

Description:

MOSFET N-CH 650V 21A TO247-3-41

Quantity:

Delivery:

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In Stock : 161

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.006485

    $4.006485

  • 10

    $3.605837

    $36.05837

  • 50

    $3.205188

    $160.2594

  • 100

    $2.80454

    $280.454

  • 500

    $2.72441

    $1362.205

  • 1000

    $2.67099

    $2670.99

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 115mOhm @ 9.7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 490µA
Supplier Device Package PG-TO247-3-41
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 114W (Tc)
Series Automotive, AEC-Q101, CoolMOS™ CFD7A
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPW65R115