IPZ65R019C7XKSA1

Infineon Technologies

Product No:

IPZ65R019C7XKSA1

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Package:

PG-TO247-4

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Description:

MOSFET N-CH 650V 75A TO247-4

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	9900 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	215 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	19mOhm @ 58.3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 2.92mA
Supplier Device Package	PG-TO247-4
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	446W (Tc)
Series	CoolMOS™ C7
Package / Case	TO-247-4
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPZ65R019