Infineon Technologies
Product No:
IQDH29NE2LM5CGATMA1
Manufacturer:
Package:
PG-TTFN-9-U02
Datasheet:
-
Description:
OPTIMOS 6 POWER-TRANSISTOR
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.496847
$2.496847
10
$2.247163
$22.47163
50
$1.997478
$99.8739
100
$1.747793
$174.7793
500
$1.697856
$848.928
1000
$1.664565
$1664.565
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 17000 pF @ 12 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 254 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 0.29mOhm @ 50A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2V @ 1.448mA |
Supplier Device Package | PG-TTFN-9-U02 |
Drain to Source Voltage (Vdss) | 25 V |
Power Dissipation (Max) | 2.5W (Ta), 278W (Tc) |
Series | OptiMOS™ 5 |
Package / Case | 9-PowerTDFN |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 75A (Ta), 789A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±16V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | IQDH29 |