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IQDH29NE2LM5CGATMA1
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IQDH29NE2LM5CGATMA1

Infineon Technologies

Product No:

IQDH29NE2LM5CGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TTFN-9-U02

Datasheet:

-

Description:

OPTIMOS 6 POWER-TRANSISTOR

Quantity:

Delivery:

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In Stock : 3442

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.496847

    $2.496847

  • 10

    $2.247163

    $22.47163

  • 50

    $1.997478

    $99.8739

  • 100

    $1.747793

    $174.7793

  • 500

    $1.697856

    $848.928

  • 1000

    $1.664565

    $1664.565

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 17000 pF @ 12 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 254 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 0.29mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 1.448mA
Supplier Device Package PG-TTFN-9-U02
Drain to Source Voltage (Vdss) 25 V
Power Dissipation (Max) 2.5W (Ta), 278W (Tc)
Series OptiMOS™ 5
Package / Case 9-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 75A (Ta), 789A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IQDH29