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IQDH45N04LM6CGATMA1
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IQDH45N04LM6CGATMA1

Infineon Technologies

Product No:

IQDH45N04LM6CGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TTFN-9-U02

Datasheet:

-

Description:

OPTIMOS 6 POWER-TRANSISTOR

Quantity:

Delivery:

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Payment:

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In Stock : 640

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.592922

    $2.592922

  • 10

    $2.33363

    $23.3363

  • 50

    $2.074338

    $103.7169

  • 100

    $1.815046

    $181.5046

  • 500

    $1.763187

    $881.5935

  • 1000

    $1.728615

    $1728.615

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 12000 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 129 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 0.45mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 1.449mA
Supplier Device Package PG-TTFN-9-U02
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 3W (Ta), 333W (Tc)
Series OptiMOS™ 6
Package / Case 9-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 60A (Ta), 637A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IQDH45