IQDH88N06LM5CGATMA1

Infineon Technologies

Product No:

IQDH88N06LM5CGATMA1

Manufacturer:

Package:

PG-TTFN-9-U02

Datasheet:

Description:

TRENCH 40<-<100V

Quantity:

Delivery:

Payment:

In Stock : 3013

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	14000 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	152 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	0.86mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.3V @ 163µA
Supplier Device Package	PG-TTFN-9-U02
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	3W (Ta), 333W (Tc)
Series	OptiMOS™ 5
Package / Case	9-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	42A (Ta), 447A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)