IQE006NE2LM5CGSCATMA1

Infineon Technologies

Product No:

Manufacturer:

Package:

PG-WHTFN-9-1

Datasheet:

Description:

OPTIMOS LOWVOLTAGE POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 7056

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	5453 pF @ 12 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	0.58mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	PG-WHTFN-9-1
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	2.1W (Ta), 89W (Tc)
Series	OptiMOS™ 5
Package / Case	9-PowerWDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	47A (Ta), 310A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)