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IQE030N06NM5SCATMA1
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IQE030N06NM5SCATMA1

Infineon Technologies

Product No:

IQE030N06NM5SCATMA1

Manufacturer:

Infineon Technologies

Package:

PG-WHSON-8-1

Datasheet:

-

Description:

OPTIMOS LOWVOLTAGE POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 2847

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.01789

    $2.01789

  • 10

    $1.816101

    $18.16101

  • 50

    $1.614312

    $80.7156

  • 100

    $1.412523

    $141.2523

  • 500

    $1.372165

    $686.0825

  • 1000

    $1.34526

    $1345.26

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.3V @ 50µA
Supplier Device Package PG-WHSON-8-1
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 2.5W (Ta), 100W (Tc)
Series OptiMOS™ 5
Package / Case 8-PowerWDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 132A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)