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IQE050N08NM5CGATMA1
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IQE050N08NM5CGATMA1

Infineon Technologies

Product No:

IQE050N08NM5CGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TTFN-9-1

Datasheet:

-

Description:

TRENCH 40<-<100V PG-TTFN-9

Quantity:

Delivery:

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Payment:

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In Stock : 4910

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.808415

    $1.808415

  • 10

    $1.627574

    $16.27574

  • 50

    $1.446732

    $72.3366

  • 100

    $1.265891

    $126.5891

  • 500

    $1.229722

    $614.861

  • 1000

    $1.20561

    $1205.61

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 43.2 nC @ 10 V
Mounting Type Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs 5mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 49µA
Supplier Device Package PG-TTFN-9-1
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 2.5W (Ta), 100W (Tc)
Series OptiMOS™
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 101A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IQE050N