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IQE050N08NM5SCATMA1
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IQE050N08NM5SCATMA1

Infineon Technologies

Product No:

IQE050N08NM5SCATMA1

Manufacturer:

Infineon Technologies

Package:

PG-WHSON-8-1

Datasheet:

-

Description:

OPTIMOS LOWVOLTAGE POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 3225

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.989383

    $1.989383

  • 10

    $1.790444

    $17.90444

  • 50

    $1.591506

    $79.5753

  • 100

    $1.392568

    $139.2568

  • 500

    $1.35278

    $676.39

  • 1000

    $1.326255

    $1326.255

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 49µA
Supplier Device Package PG-WHSON-8-1
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 2.5W (Ta), 100W (Tc)
Series OptiMOS™ 5
Package / Case 8-PowerWDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 99A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)