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IQE220N15NM5CGATMA1
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IQE220N15NM5CGATMA1

Infineon Technologies

Product No:

IQE220N15NM5CGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TTFN-9-3

Datasheet:

-

Description:

TRENCH >=100V

Quantity:

Delivery:

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Payment:

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In Stock : 3488

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.501132

    $1.501132

  • 10

    $1.351019

    $13.51019

  • 50

    $1.200906

    $60.0453

  • 100

    $1.050793

    $105.0793

  • 500

    $1.02077

    $510.385

  • 1000

    $1.000755

    $1000.755

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 75 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 18.3 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 22mOhm @ 16A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.6V @ 46µA
Supplier Device Package PG-TTFN-9-3
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 2.5W (Ta), 100W (Tc)
Series OptiMOS™ 5
Package / Case 9-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 44A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IQE220N15