IRF100P218AKMA1

Infineon Technologies

Product No:

IRF100P218AKMA1

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Package:

PG-TO247-3

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Description:

MOSFET N-CH 100V 209A TO247AC

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	24000 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	412 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.28mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 278µA
Supplier Device Package	PG-TO247-3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3.8W (Ta), 556W (Tc)
Series	StrongIRFET™
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	209A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube