IRF1010NPBF
detaildesc

IRF1010NPBF

Infineon Technologies

Product No:

IRF1010NPBF

Manufacturer:

Infineon Technologies

Package:

TO-220AB

Datasheet:

-

Description:

MOSFET N-CH 55V 85A TO220AB

Quantity:

Delivery:

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Payment:

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In Stock : 5004

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.72

    $0.72

  • 10

    $0.648

    $6.48

  • 50

    $0.576

    $28.8

  • 100

    $0.504

    $50.4

  • 500

    $0.4896

    $244.8

  • 1000

    $0.48

    $480

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3210 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 11mOhm @ 43A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 55 V
Power Dissipation (Max) 180W (Tc)
Series HEXFET®
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 85A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRF1010