IRF3710PBF
detaildesc

IRF3710PBF

Infineon Technologies

Product No:

IRF3710PBF

Manufacturer:

Infineon Technologies

Package:

TO-220AB

Datasheet:

-

Description:

MOSFET N-CH 100V 57A TO220AB

Quantity:

Delivery:

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Payment:

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In Stock : 87097

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.351086

    $0.351086

  • 10

    $0.3072

    $3.072

  • 50

    $0.263314

    $13.1657

  • 100

    $0.241371

    $24.1371

  • 500

    $0.2304

    $115.2

  • 1000

    $0.219429

    $219.429

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3130 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 23mOhm @ 28A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 200W (Tc)
Series HEXFET®
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 57A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRF3710