IRF5210PBF
detaildesc

IRF5210PBF

Infineon Technologies

Product No:

IRF5210PBF

Manufacturer:

Infineon Technologies

Package:

TO-220AB

Datasheet:

-

Description:

MOSFET P-CH 100V 40A TO220AB

Quantity:

Delivery:

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Payment:

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In Stock : 26971

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.960686

    $0.960686

  • 10

    $0.864617

    $8.64617

  • 50

    $0.768549

    $38.42745

  • 100

    $0.67248

    $67.248

  • 500

    $0.653266

    $326.633

  • 1000

    $0.640457

    $640.457

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 60mOhm @ 24A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 200W (Tc)
Series HEXFET®
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRF5210