IRF530A

Fairchild Semiconductor

Product No:

IRF530A

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Package:

TO-220-3

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Description:

POWER FIELD-EFFECT TRANSISTOR, 1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	790 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	110mOhm @ 7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	55W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	-
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk