IRFB4110PBF
detaildesc

IRFB4110PBF

Infineon Technologies

Product No:

IRFB4110PBF

Manufacturer:

Infineon Technologies

Package:

TO-220AB

Datasheet:

-

Description:

MOSFET N-CH 100V 120A TO220AB

Quantity:

Delivery:

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Payment:

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In Stock : 133792

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.627566

    $0.627566

  • 10

    $0.54912

    $5.4912

  • 50

    $0.470674

    $23.5337

  • 100

    $0.431451

    $43.1451

  • 500

    $0.41184

    $205.92

  • 1000

    $0.392229

    $392.229

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 9620 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 4.5mOhm @ 75A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 370W (Tc)
Series HEXFET®
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRFB4110