IRFB4227PBF
Infineon Technologies
Product No:
IRFB4227PBF
Manufacturer:
Package:
TO-220AB
Datasheet:
-
Description:
MOSFET N-CH 200V 65A TO220AB
Quantity:
Delivery:
Payment:
In Stock : 261966
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.730286
$0.730286
10
$0.657257
$6.57257
50
$0.584229
$29.21145
100
$0.5112
$51.12
500
$0.496594
$248.297
1000
$0.486857
$486.857
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Product Information
Parameter Info
User Guide
| Operating Temperature | -40°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 46A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 200 V |
| Power Dissipation (Max) | 330W (Tc) |
| Series | HEXFET® |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | IRFB4227 |
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