IRFB4229PBF
detaildesc

IRFB4229PBF

Infineon Technologies

Product No:

IRFB4229PBF

Manufacturer:

Infineon Technologies

Package:

TO-220AB

Datasheet:

-

Description:

MOSFET N-CH 250V 46A TO220AB

Quantity:

Delivery:

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Payment:

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In Stock : 49133

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.503771

    $1.503771

  • 10

    $1.353394

    $13.53394

  • 50

    $1.203017

    $60.15085

  • 100

    $1.05264

    $105.264

  • 500

    $1.022565

    $511.2825

  • 1000

    $1.002514

    $1002.514

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4560 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 46mOhm @ 26A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 250 V
Power Dissipation (Max) 330W (Tc)
Series HEXFET®
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRFB4229