IRFP4768PBFXKMA1

Infineon Technologies

Product No:

IRFP4768PBFXKMA1

Manufacturer:

Package:

PG-TO247-3-901

Datasheet:

Description:

TRENCH >=100V

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In Stock : 247

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	10880 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	270 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	17.5mOhm @ 56A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	PG-TO247-3-901
Drain to Source Voltage (Vdss)	250 V
Power Dissipation (Max)	520W (Tc)
Series	HEXFET®
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	93A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube